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| WFF12N60 Silicon N-Channel MOSFET Features 12A, 600V,RDS(on)(Max 0.65)@VGS=10V Ultra-low Gate Charge(Typical 39nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( VISO = 4000V AC ) Maximum Junction Temperature Range(150) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a Electronic lamp ballast. G D S TO220F Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25) Continuous Drain Current(@Tc=100) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy 2) Repetitive Avalanche Energy 1) Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25) Derating Factor above 25 Junction and Storage Temperature Maximum lead Temperature for soldering purposes (Note (Note (Note 3) (Note1) Parameter Value 600 12* 7.6* 48* 30 880 25 4.5 51 0.41 -55~150 300 Units V A A A V mJ mJ V/ns W W/ *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Value Min - Typ 0.5 - Max 2.45 62.5 Units /W /W /W Rev. C Nov.2008 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. T03-1 WFF12N60 Electrical Characteristics (Tc = 25C) 25 Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Break Voltage Temperature Coefficient Gate threshold voltage Drain-source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Turn-on Rise time Switchi ng time Turn-on Delay time Turn-off Fall time Turn-off Delay time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") Charge Symbol IGSS V(BR)GSS IDSS V(BR)DSS BVDSS/ TJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton tf toff Qg Qgs Qgd Test Condition VGS = 30 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 250 A, VGS = 0 V ID=250A, Referenced to 25 VDS = 10 V, ID =250 A VGS = 10 V, ID =6.0A VDS = 50 V, ID =6.0A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD =300 V, ID =12 A RG=9.1 RD=31 VDD = 400 V, VGS = 10 V, ID =1 A (Note4,5) (Note4,5) Min 30 600 3 - Type 0.5 15 1790 175 23 133 80 100 233 39 8.5 19 Max 100 1 4.5 0.65 Unit nA V A V V/ V S 2355 232 31 175 100 ns 160 310 52 nC pF Source-Drain Ratings and Characteristics (Ta = 25C) Source- 25 Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 12 A, VGS = 0 V IDR = 12 A, VGS = 0 V, dIDR / dt = 100 A / s Min - Type 418 4.85 Max 12 48 1.4 - Unit A A V ns C Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=11.2mH,IAS=12A,VDD=50V,RG=25,Starting TJ=25 3.ISD12A,di/dt300A/us, VDD Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. WFF12N60 Fig. 1 On-State Characteristics Fig.2 Transfer Characteristics Fig.3 Capacitance Variation vs Drain Voltage Fig.4 Breakdown Voltage Variation vs Temperature Fig.5 On-Resistance Variation vs Junction Temperature Fig.6 Gate Charge Characteristics 3/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. WFF12N60 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response Curve 4/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. WFF12N60 Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. WFF12N60 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. WFF12N60 TO-220F Package Dimension TO-220F Unit: mm 7/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. |
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